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產(chǎn)品型號HY125N10T的Datasheet PDF文件預(yù)覽

HY125N10T  
100V / 125A  
N-Channel Enhancement Mode MOSFET  
100V, RDS(ON)=5.8mW@VGS=10V, ID=40A  
Features  
? Low On-State Resistance  
TO-220AB  
? Excellent Gate Charge x RDS(ON) Product ( FOM )  
? Fully Characterized Avalanche Voltage and Current  
? Specially Desigened for DC-DC Converter, Off-line UPS,  
Automotive System, Solenoid and Motor Control  
? In compliance with EU RoHs 2002/95/EC Directives  
Drain  
2
Mechanical Information  
1
? Case: TO-220AB Molded Plastic  
Gate  
? Terminals : Solderable per MIL-STD-750,Method 2026  
3
Source  
3
2
1
Marking & Ordering Information  
TYPE  
MARKING  
PACKAGE  
PACKING  
HY125N10T  
125N10T  
TO-220AB  
50PCS/TUBE  
Absolute Maximum Ratings (TC=25°C unless otherwise specified )  
Parameter  
Value  
100  
Units  
Symbol  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
A
A
VGS  
ID  
+20  
Continuous Drain Current 1)  
Pulsed Drain Current 1)  
TC=25℃  
TC=25℃  
120  
IDM  
480  
Maximum Power Dissipation  
Derating Factor  
192  
1.28  
PD  
W
EAS  
Avalanche Energy with Single Pulse, L=0.3mH  
1250  
mJ  
TJ, TSTG  
Operating Junction and Storage Temperature Range  
-55 to +175  
℃
Note : 1. Maximum DC current limited by the package  
Thermal Characteristics  
Parameter  
Symbol  
RqJC  
Value  
0.78  
Units  
℃/W  
℃/W  
Junction-to-Case Thermal Resistance  
Junction-to-Ambient Thermal Resistance  
RqJA  
62.5  
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE  
PAGE.1  
REV.1, 8-May-2012  
HY125N10T  
Electrical Characteristics ( TC=25, Unless otherwise noted )  
Parameter  
Test Condition  
Symbol  
Min.  
Typ.  
Max.  
Units  
Static  
BVDSS  
VGS(th)  
RDS(ON)  
IDSS  
VGS=0V、ID=250uA  
VDS=VGS、ID=250uA  
VGS=10V、ID=80A  
VDS=80V、VGS=0V  
VGS=+20V、VDS=0V  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
V
V
100  
-
3
-
4
2
-
Drain-Source On-State Resistance  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current  
4.6  
-
5.8  
1
mW  
uA  
nA  
-
IGSS  
-
-
100  
Dynamic  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
Qg  
Qgs  
Qgd  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
178  
32  
VDS=50V，ID=40A  
nC  
ns  
VGS=10V  
45  
31.8  
19.2  
76  
VDD=50V，ID=40A  
VGS=10V，RG=3.6W  
td(off)  
tf  
52  
Ciss  
Coss  
Crss  
Rg  
9200  
680  
320  
1.3  
VDS=30V，VGS=0V  
pF  
f=1.0MHZ  
W
Source-Drain Diode  
Max. Diode Forwad Voltage  
Diode Forward Voltage  
IS  
VSD  
trr  
-
A
V
-
-
-
-
-
120  
IS=80A、VGS=0V  
0.86  
72  
1.4  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
uC  
-
-
VGS=0V、IS=40A  
di/dt=100A/us  
Qrr  
210  
NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%  
PAGE.2  
REV.1, 8-May-2012  
HY125N10T  
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)  
200  
160  
120  
80  
8
7
6
5
4
3
VGS=10V  
VGS= 10V~ 8.0V  
7.0V  
6.0V  
5.0V  
40  
0
0
5
10  
15  
20  
0
20  
40  
60  
80  
100  
VDS - Drain-to-Source Voltage (V)  
ID - Drain Current (A)  
Fig.1 Output Characteristric  
Fig.2 On-Resistance vs Drain Current  
2.2  
2
20  
16  
12  
8
VGS =10 V  
ID =80A  
ID =80A  
1.8  
1.6  
1.4  
1.2  
1
0.8  
0.6  
0.4  
4
0
-50 -25  
0
25 50 75 100 125 150 175  
5
6
7
8
9
10  
TJ - Junction Temperature (oC)  
VGS - Gate-to-Source Voltage (V)  
Fig.3 On-Resistance vs Gate to Source Voltage  
Fig.4 On-Resistance vs Junction Temperature  
12000  
12  
f = 1MHz  
VDS=50V  
ID =40A  
VGS = 0V  
10000  
10  
Ciss  
8000  
8
6
4
2
0
6000  
4000  
Coss  
2000  
Crss  
0
0
40  
80  
120  
160  
200  
0
5
10  
15  
20  
25  
30  
VDS - Drain-to-Source Voltage (V)  
Qg - Gate Charge (nC)  
Fig.6 Gate Charge Characteristic  
Fig.5 Capacitance Characteristic  
PAGE.3  
REV.1, 8-May-2012  
HY125N10T  
Typical Characteristics Curves ( TC=25℃, unless otherwise noted)  
1.2  
1.1  
1
200  
160  
120  
80  
ID = 250mA  
0.9  
0.8  
40  
0
-50 -25  
0
25 50 75 100 125 150 175  
0
25  
50  
75  
100 125 150 175  
TJ - Junction Temperature (oC)  
TJ - Junction Temperature (oC)  
Fig.8 Breakdown Voltage vs Junction Temperature  
Fig.7 Power Derating Curve  
1000  
100  
10  
VGS = 0V  
TJ = 125oC  
25oC  
1
-55oC  
0.1  
0.01  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
VSD - Source-to-Drain Voltage (V)  
Fig.9 Body Diode Forward Voltage Characteristic  
PAGE.4  
REV.1, 8-May-2012  
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