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HY125N10T

100V / 125A

N-Channel Enhancement Mode MOSFET

100V, R_DS(ON)=5.8mW@V_GS=10V, I_D=40A

Features

? Low On-State Resistance

TO-220AB

? Excellent Gate Charge x R_DS(ON)Product ( FOM )

? Fully Characterized Avalanche Voltage and Current

? Specially Desigened for DC-DC Converter, Off-line UPS,

Automotive System, Solenoid and Motor Control

? In compliance with EU RoHs 2002/95/EC Directives

Drain

2

Mechanical Information

1

? Case: TO-220AB Molded Plastic

Gate

? Terminals : Solderable per MIL-STD-750,Method 2026

3

Source

3

2

1

Marking & Ordering Information

TYPE

MARKING

PACKAGE

PACKING

HY125N10T

125N10T

TO-220AB

50PCS/TUBE

Absolute Maximum Ratings (T_C=25°C unless otherwise specified )

Parameter

Value

100

Units

Symbol

V_DS

Drain-Source Voltage

Gate-Source Voltage

V

A

V_GS

I_D

+20

Continuous Drain Current ¹⁾

Pulsed Drain Current ¹⁾

T_C=25℃

120

I_DM

480

Maximum Power Dissipation

Derating Factor

192

1.28

P_D

W

E_AS

Avalanche Energy with Single Pulse, L=0.3mH

1250

mJ

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 to +175

℃

Note : 1. Maximum DC current limited by the package

Thermal Characteristics

Parameter

Symbol

R_qJC

Value

0.78

Units

℃/W

Junction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance

R_qJA

62.5

COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE

PAGE.1

REV.1, 8-May-2012

HY125N10T

Electrical Characteristics ( T_C=25, Unless otherwise noted )

Parameter

Test Condition

Symbol

Min.

Typ.

Max.

Units

Static

BV_DSS

V_GS(th)

R_DS(ON)

I_DSS

V_GS=0V、I_D=250uA

V_DS=V_GS、I_D=250uA

V_GS=10V、I_D=80A

V_DS=80V、V_GS=0V

V_GS=+20V、V_DS=0V

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V

100

-

3

-

4

2

-

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current

Gate Body Leakage Current

4.6

-

5.8

1

mW

uA

nA

-

I_GSS

-

100

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Qg

Qgs

Qgd

t_d(on)

t_r

-

178

32

V_DS=50V，I_D=40A

nC

ns

V_GS=10V

45

31.8

19.2

76

V_DD=50V，I_D=40A

V_GS=10V，R_G=3.6W

t_d(off)

t_f

52

C_iss

C_oss

C_rss

Rg

9200

680

320

1.3

V_DS=30V，V_GS=0V

pF

f=1.0MH_Z

W

Source-Drain Diode

Max. Diode Forwad Voltage

Diode Forward Voltage

I_S

V_SD

t_rr

-

A

V

-

120

I_S=80A、V_GS=0V

0.86

72

1.4

Reverse Recovery Time

Reverse Recovery Charge

ns

uC

-

V_GS=0V、I_S=40A

di/dt=100A/us

Q_rr

210

NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2%

PAGE.2

REV.1, 8-May-2012

HY125N10T

Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)

200

160

120

80

8

7

6

5

4

3

V_GS=10V

V_GS= 10V~ 8.0V

7.0V

6.0V

5.0V

40

0

5

10

15

20

0

20

40

60

80

100

V_DS- Drain-to-Source Voltage (V)

I_D- Drain Current (A)

Fig.1 Output Characteristric

Fig.2 On-Resistance vs Drain Current

2.2

2

20

16

12

8

V_GS=10 V

I_D=80A

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

4

0

-50 -25

0

25 50 75 100 125 150 175

5

6

7

8

9

10

T_J- Junction Temperature (^oC)

V_GS- Gate-to-Source Voltage (V)

Fig.3 On-Resistance vs Gate to Source Voltage

Fig.4 On-Resistance vs Junction Temperature

12000

12

f = 1MHz

V_DS=50V

I_D=40A

V_GS= 0V

10000

10

Ciss

8000

8

6

4

2

0

6000

4000

Coss

2000

Crss

0

40

80

120

160

200

0

5

10

15

20

25

30

V_DS- Drain-to-Source Voltage (V)

Q_g- Gate Charge (nC)

Fig.6 Gate Charge Characteristic

Fig.5 Capacitance Characteristic

PAGE.3

REV.1, 8-May-2012

HY125N10T

Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)

1.2

1.1

1

200

160

120

80

I_D= 250mA

0.9

0.8

40

0

-50 -25

0

25 50 75 100 125 150 175

0

25

50

75

100 125 150 175

T_J- Junction Temperature (^oC)

Fig.8 Breakdown Voltage vs Junction Temperature

Fig.7 Power Derating Curve

1000

100

10

V_GS= 0V

T_J= 125^oC

25^oC

1

-55^oC

0.1

0.01

0.2

0.4

0.6

0.8

1

1.2

1.4

V_SD- Source-to-Drain Voltage (V)

Fig.9 Body Diode Forward Voltage Characteristic

PAGE.4

REV.1, 8-May-2012

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